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Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom.
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A. Hollmann, T. Struck, V. Langrock, A. Schmidbauer, F. Schauer, T. Leonhardt, K. Sawano, H. Riemann, N. V. Abrosimov, D. Bougeard, and L. R. Schreiber, Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si \mathrm{Si} / Si x Ge 1 − x \mathrm{Si}_{x}\mathrm{Ge}_{1-x} Quantum Dot, Phys. Rev. Appl. 13
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