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Non-equilibrium breakdown of quantum Hall state in graphene · Around

2009

Non-equilibrium breakdown of quantum Hall state in graphene

Singh, Vibhor, Deshmukh, Mandar M.

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In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m).

The measured critical currents for dissipationless transport in the vicinity of integer filling factors show a dependence on filling factor.
The breakdown can be understood in terms of inter Landau level (LL) scattering resulting from mixing of wavefunctions of different LLs.
To further study the effect of transverse electric field, we measured the transverse resistance between the $\nu=2$ to $\nu=6$ plateau transition for different bias currents and observed an invariant point.

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cond-mat/0811.4595v2

T. Kramer et al

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Nominally, the filling factor is defined as the ratio of number of charge carriers to the number of magnetic flux quanta penetrating the sample and therefore is positive. However, in the context of QHE in graphene a negative filling factor is used to distinguish the filling factor of holes from that of electrons (cf. firstgraphene ; grapheneRMP )

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The ν = 10 \nu=10 is not studied as the gate voltage required to study it can lead to a dielectric breakdown of the gate-dielectric SiO 2

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