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The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization.
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2020
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J. Zhou, Y. P. Feng, and L. Shen, Atomic-orbital-free intrinsic ferromagnetism in electrenes, Phys. Rev. B 102
2020
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2020
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W. Du, Y. Ma, R. Peng, H. Wang, B. Huang, and Y. Dai, Prediction of single-layer TiVI 6 \mathrm{TiVI_{6}} as a promising two-dimensional valleytronic semiconductor with spontaneous valley polarization, J. Mater. Chem. C 8
2020
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2020
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2021
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X. Y. Feng, X. L. Xu, Z. L. He, R. Peng, Y. Dai, B. B. Huang and Y. D. Ma, Valley-related multiple Hall effect in monolayer VSi 2 P 4 \mathrm{VSi_{2}P_{4}} , Phys. Rev. B 104
2021
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S. D. Guo, J. X. Zhu, W. Q. Mu and B. G. Liu, Possible way to achieve anomalous valley Hall effect by piezoelectric effect in a GdCl 2 \mathrm{GdCl_{2}} monolayer, Phys. Rev. B 104
2021
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2023
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X. Chen, D. Wang, L. Y. Li and B. Sanyal, Giant spin-splitting and tunable spin-momentum locked transport in room temperature collinear antiferromagnetic semimetallic CrO monolayer, Appl. Phys. Lett. 123
2023
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S. D. Guo, Y. L. Tao, Z. Y. Zhuo, G. Zhu and Y. S. Ang, Electric-field-tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayers, Phys. Rev. B 109
2024
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S. D. Guo, L. Zhang, Y. Zhang, P. Li and G. Wang, Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer Fe 2 CF 2 \mathrm{Fe_{2}CF_{2}} , Phys. Rev. B 110
2024
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Y. Zhu, T. Chen, Y. Li, L. Qiao, X. Ma, C. Liu, T. Hu, H. Gao and W. Ren, Multipiezo Effect in Altermagnetic V 2 SeTeO \mathrm{V_{2}SeTeO} Monolayer, Nano Lett. 24
2024
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Y. Wu, L. Deng, X. Yin, J. Tong, F. Tian and X. Zhang, Valley-Related Multipiezo Effect and Noncollinear Spin Current in an Altermagnet Fe 2 Se 2 O \mathrm{Fe_{2}Se_{2}O} Monolayer, Nano Lett. 24
2024
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R. W. Zhang, C. X. Cui, R. Z. Li, J. Y. Duan, L. Li, Z. M. Yu and Y. G. Yao, Predictable gate-field control of spin in altermagnets with spin-layer coupling, Phys. Rev. Lett. 133
2024
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