Interacting Random-field Dipole Defect Model for Heating in Semiconductor-based Qubit Devices

Understand

Semiconductor qubit devices suffer from the drift of important device parameters as they are operated.

• The most important example is a shift in qubit operating frequencies.
• This effect appears to be directly related to the heating of the system as gate operations are applied.
• We show that the main features of this phenomenon can be explained by the two-level systems that can also produce charge noise, if these systems are considered to form an interacting random-field glass.