Hysteretic effects and magnetotransport of electrically switched CuMnAs

Understand

Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization.

• In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses.
• By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field.
• These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs.