Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

Understand

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices.

• Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates.
• At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h.
• We investigate these ZBPs for large ranges of gate voltages in different devices.