Interfacial crystal Hall effect reversible by ferroelectric polarization

Understand

The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics.

• Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.
• We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers.
• We explicitly demonstrate this phenomenon using density functional theory calculations for three material systems: MnBi$_{2}$Te$_{4}$/GeI$_{2}$ and topological In$_{2}$Te$_{3}$/MnBi$_{2}$Te$_{4}$/In$_{2}$Te$_{3}$ van der Waals heterostructures, and GeTe/Ru$_{2}$MnGe/GeTe heterostructure composed of three-dimensional materials.