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2020

Band structure of twisted bilayer graphene on hexagonal boron nitride

Cea, Tommaso, Pantaleon, Pierre A., Guinea, Francisco

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The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied.

At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic structure is strongly disturbed.
The width of the low energy peak in the density of states changes from $W \sim 5 - 10$ meV for a decoupled system to $\sim 20 - 30$ meV.
Spikes in the density of states due to van Hove singularities are smoothed out.

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