Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Understand

Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision.

• Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique.
• The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored.
• In this work, we demonstrate successful fabrication of atomic-scale structures of arsenic-in-silicon.