GaAs as a bright cryogenic scintillator for the direct dark matter detection

Understand

The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied.

• The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are presented.
• The undoped GaAs demonstrated a narrow emission band at 838 nm (1.48 eV) and a low light output of about 2 ph/keV.
• The GaAs:Si is characterized by three broad luminescence bands at 830 nm (1.49 eV), 1070 nm (1.16 eV), 1335 nm (0.93 eV) and a light output of about 71 ph/keV.