Multilayer ion trap technology for scalable quantum computing and quantum simulation

Understand

We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels.

• We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry.
• We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled $\,^{9}$Be$^{+}$ ion held at a distance of 35$\,\mu$m above the trap surface.
• This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.