Single-Spin Relaxation in a Synthetic Spin-Orbit Field

Understand

Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins.

• We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon.
• The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maximum relaxation time of 160 ms at low field, a strong spin-valley relaxation hotspot at intermediate fields, and a B^4 scaling at high fields.
• T_1 is found to decrease with lattice temperature T_lat as well as with added electrical noise.