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We describe a microfabrication process for superconducting through-silicon vias appropriate for use in superconducting qubit quantum processors.
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R. Nagarajan, et. al., Development of a novel deep silicon tapered via etch process for through-silicon interconnection in 3-D integrated systems, Electronic Components and Technology Conference, May 30 - June 2, 2006, San Diego, CA, USA, IEEE, 383 (2006)
2006
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S. Heraud, et. al., Easy to fill sloped vias for interconnects applications improved control of silicon tapered etch profile,Electronic Components and Technology Conference, 59th (2009)
2009
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A Kahouli, Structural and dielectric study of parylene C thin films, Appl. Phys. Lett. 94, 152901 (2009);
2009
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A. G. Fowler, M. Mariantoni, J. M. Martinis, and A. N. Cleland, Surface codes: towards practical large-scale quantum computation. Phys. Rev. A 86, 032324 (2012)
2012
Cited alongside, same era.
P. Dixit, et. al., Effect of process gases on fabricating tapered through-silicon vias by continuous SF6/O2/Ar plasma etching, ECS Journal of Solid State Science and Technology, 1 (3) 107 (2012)
2012
Cited alongside, same era.
Lau, J. H., 2013, Through-Silicon Vias for 3D Integration, McGraw-Hill, New York
2013
Cited alongside, same era.
D. Rosenberg, et. al., 3D integrated superconducting qubits. arXiv:1706.04116
Cited in the paper.
URL: https://scscoatings.com/parylene-applications/ electronic-coatings/
Cited in the paper.
J. P. Gambino, S. A. Adderly, J. U. Knickerbocker, An overview of through-silicon-via technology and manufacturing challenges, Microelectronic Engineering; 135, 73 (2015)
2015
Later among the works it cites.
M. Mohseni, et. al., Commercialize quantum technologies in five years, Nature 543, 171, (2017)
2017
Closest in time.
J. Mutus, et. al., H46.00006: 3D integration of superconducting qubits with bump bonds: Part 1, J. Kelly, et. al., H46.00007: 3D integration of superconducting qubits with bump bonds: Part 2, E. Lucero, et. al., H46.00008: 3D integration of superconducting qubits with bump bonds: Part 3, APS March Meeting 2017
2017
Closest in time.
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