Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Understand

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap.

• Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example.
• Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry.
• Here, we present synthesis of magnetically-doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts.