Doping a Mott insulator with orbital degrees of freedom

Understand

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom.

• We describe the system in terms of a generalized t-J model.
• At a specific point in parameter space the model becomes integrable in analogy to the one-band supersymmetric t-J model.
• We use the Bethe ansatz to derive a set of nonlinear integral equations which allow us to study the thermodynamics exactly.