Observation of extremely slow hole spin relaxation in self-assembled quantum dots

Understand

We report the measurement of extremely slow hole spin relaxation dynamics in small ensembles of self-assembled InGaAs quantum dots.

• Individual spin orientated holes are optically created in the lowest orbital state of each dot and read out after a defined storage time using spin memory devices.
• The resulting luminescence signal exhibits a pronounced polarization memory effect that vanishes for long storage times.
• The hole spin relaxation dynamics are measured as a function of external magnetic field and lattice temperature.